Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric
نویسندگان
چکیده
منابع مشابه
Ge MOS Capacitors with Thermally Evaporated HfO2 as Gate Dielectric
We have investigated the characteristics of thermally evaporated hafnium oxide HfO2 films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. The presence of crystalline GeO2 was evident from X-ray diffraction results on as-deposited films. Capacitance–voltage C-V and current–voltage I-V measurements of the asdeposited metal-oxide semiconduct...
متن کاملCharacterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted...
متن کاملModeling of Accumulation MOS Capacitors
A model for MOS capacitors in accumulation is presented, which is able to predict the nonlinear distortion accurately. The key idea of this work is to include the polysilicon gate depletion effect in that model. Several test structures based on MOS capacitors in accumulation have been implemented with the object of validating the model and to explore the potential applications to high performan...
متن کاملElectrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack
The electrical behavior of decananometer MOS transistors with high-κ dielectric gate stack has been investigated using 2D numerical simulation. Two important electrostatic limitations of high-κ materials have been analyzed and discussed in this work: i) the gate-fringing field effects which compromise short-channel performance when simultaneously increasing the dielectric constant and its physi...
متن کاملstudy of dna interaction with ethylenediaminetetraacetic acid and sesamol food additives
برهمکنش dnaتیموس گاوی طبیعی (ct-dna) با اتیلن دی آمین تترااستات (edta)در بافرtris-hcl با 8/7 ph ( دراین ph،edta به نمک دی سدیم تبدیل می شود) وسسامول در بافر tris-hcl با4/7 ph مورد بررسی قرار گرفته است. edta و سسامول استفاده فراوانی در تکنولوژی غذایی و صنعت شیمیایی دارند. مدل اتصال dna مربوط بهedta بوسیله اسپکتروفتومتری جذب، دورنگ نمایی حلقوی(cd)، ویسکومتری وژل الکتروفورز بررسی شده است. طیفuv ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Integrated Circuits and Systems
سال: 2007
ISSN: 1872-0234,1807-1953
DOI: 10.29292/jics.v2i2.272